2N7002ET1G
Manufacturer:
On Semiconductor
Mfr.Part #:
2N7002ET1G
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 300 mW 60 V Continuous Drain Current (ID):260 mA 810 pC
| Parameter | Value |
|---|---|
| Length | 2.9 mm |
| Width | 1.3 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 2.5 Ω |
| Height | 940 µm |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Max Power Dissipation | 300 mW |
| Power Dissipation | 300 mW |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 26.7 pF |
| Continuous Drain Current (ID) | 260 mA |
| Rds On Max | 2.5 Ω |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 1.7 ns |
| Turn-Off Delay Time | 4.8 ns |
| Element Configuration | Single |
| Fall Time | 1.2 ns |
| Rise Time | 1.2 ns |
| Gate Charge | 810 pC |
| Drain to Source Resistance | 860 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 11285
Distributors
pcbx
pcbxUnit Price$0.07660
Ext.Price$0.07660
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.07660 | $0.07660 |
| 10 | $0.03830 | $0.38300 |
| 50 | $0.03486 | $1.74300 |
| 100 | $0.03173 | $3.17300 |
| 500 | $0.02888 | $14.44000 |
| 1000 | $0.02628 | $26.28000 |
| 3000 | $0.02391 | $71.73000 |
| 5000 | $0.02218 | $110.90000 |
| 10000 | $0.02058 | $205.80000 |